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Title

AlN – From amorphous to preferentially oriented hexagonal thin films

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Author(s)

Z. Chen, M. Bosund, I. Tuoriniemi, V. Malinen, Z. Zhu, E. Salmi, and K. Härkönen

Event

18th International Conference on Atomic Layer Deposition (ALD 2018), Incheon, South Korea

Abstract

ALD-AlN was investigated by different deposition methods and using single wafer and batch reactors. Good uniformity and influence of deposition method on crystallinity demonstrated.

Large-area optical coatings grown by Spatial ALD

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Niiranen, K., Heikkinen, I., Virtanen, S., and Salmi, E

Joint EuroCVD 21 – Baltic ALD 15 Conference Linköping, Sweden (2017)

Sheet-to-sheet Spatial ALD tool was used to deposit optical multilayer films on large-area substrates. Repeatability and conformity to design achieved.

Atomic Layer Deposition of conformal optical interference coatings

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Niiranen, K., Härkönen, K., Päivike, P. and Sneck, S.

OSA Optical Interference Coatings Conference 2019

Introduction to optical ALD coatings and possibilities. < 0.4 % thickness variation over 150 mm shapes demonstrated.

Coating of ultra high aspect ratio substrates utilizing new stop flow ALD reactor

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Salmi, E., Bosund, M., Söderlund, M.

Réseau des Acteurs Français de l’ALD 2éme Edition (RAFALD 2016)

Studies on the Beneq high aspect ratio module for TFS 200. Conformal coating on nanotubular TiO2 and test structures with aspect ratios of 1:2000-1:3000 demonstrated

ALD Thin Films for Infrared Applications

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Koski, K.

2nd Executive Infrared Imaging Forum (2017)

Case studies and examples of the utilization of ALD for infrared coating applications.

ALD for Optical Coatings Materials and Applications

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Koski, K.

ALD for Industry 2019

Overview of industrial use of ALD in optical coating applications at Beneq.

Influence of Plasma Power on the Si Solar Cell Passivation Properties of Al2O3 Thin Films deposited by Plasma Enhanced Atomic Layer Deposition

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Zhu, Z., Sippola, P., Salmi, E

AVS 64th International Symposium & Exhibition (2017)

Study of the influence of plasma parameters on PEALD-Al2O3. Influence of PEALD process conditions on solar cell passivation studied.

Investigation of PEALD SiO2 thin films by rf-GDOES

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Zhu, Z., Modanese, C., Sippola P., Di Sabatino, M., Savin, H.

ALTECH 2017 – Analytical techniques for precise characterization of nano materials

Study of chemical and structural properties of PEALD-SiO2 by using radio frequency glow discharge optical emission spectroscopy (rf-GDOES).

Low Temperature Plasma-enhanced ALD for SiO2 Using CO2

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Zhu, Z., Sippola, P., Ylivaara, O., Merdes, S., Mizohata, K., Salmi, E., Modanese, C., Di Sabatino, M., Savin, H.

4th International Conference on ALD Applications & 2018 China ALD Conference

Study of PEALD process for SiO2 using BTBAS and CO2-plasma as precursors at low (90-200 °C) temperatures.

Atomic layer deposition for modification of surface properties

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Salmi, E., Härkönen, K.

European Conference on Nanofilms 2016 (ECNF 2016)

Study of the film growth of Titanium-aluminum carbonitrides and aluminum-doped zinc oxide and their effect on the surface properties of substrates.

Recent Advances in ALD Technology

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Salmi, E.

14th International Baltic Conference on Atomic Layer Deposition, St. Petersburg, Russia (2016)

Overview of the recent advances in ALD: spatial-, roll-to-roll- and fluidized bed ALD.

Rotary Spatial Plasma Enhanced Atomic Layer Deposition

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Sneck, S., Söderlund, M., Bosund, M., Soininen, P

China Semiconductor Technology International Conference 2017

Introduction of Beneq rotary plasma-enhanced spatial ALD (Beneq C2R), including the study of the conformality, roughness and optical quality of deposited films.

Al2O3 Thin Films Prepared by a Combined Thermal‐Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

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Zhu, Z., Merdes, S., Ylivaara, O., Mizohata, K., Heikkilä, M., Savin H.

Z. Zhu, S. Merdes, O. M. Ylivaara, K. Mizohata, M. J. Heikkilä and H. Savin, “Al2O3 Thin Films Prepared by a Combined Thermal‐Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications”, Phys. Status Solidi A, 2019; doi:10.1002/pssa.20190023

In this article, a combined H2O thermal atomic layer deposition of Al2O3 with in situ N2 plasma treatment process at 90 °C for encapsulation applications is reported. The effect of process parameters on the growth behavior and properties of Al2O3 thin films, such as elemental composition, residual stress, moisture permeation barrier ability, density, and roughness, is investigated.

Nanometer-Scale Depth-Resolved Atomic Layer Deposited SiO2 Thin Films Analyzed by Glow Discharge Optical Emission Spectroscopy

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Zhen Zhu, Chiara Modanese, Perttu Sippola, Marisa Di Sabatino, and Hele Savin

Z. Zhu, S. Merdes, O. M. Ylivaara, K. Mizohata, M. Heikkilä, H. Savin, ”Nanometer‐Scale Depth‐Resolved Atomic Layer Deposited SiO2 Thin Films Analyzed by Glow Discharge Optical Emission Spectroscopy”, Phys. Status Solidi A, 25:6 1700864, 2018; doi: 10.1002/pssa.201700864

In this contribution, pulsed radio frequency (rf) glow discharge optical emission spectroscopy (GDOES) is used to investigate the film properties of SiO2 deposited by plasma enhanced atomic layer deposition (PEALD), for example, the chemical composition, structural properties and film thickness. The main impurities in the film, that is, H, C, and N, are detected.

Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100 °C for moisture barrier applications

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Zhen Zhu, Perttu Sippola, Harri Lipsanen, Hele Savin and Saoussen Merdes

Z. Zhu, P. Sippola, H. Lipsanen, , H. Savin, and S. Merdes, “Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100°C for moisture barrier applications”. Jpn. J. Appl. Phys. 57: 125502, 2018; doi:10.7567/JJAP.57.125502

We report the effect of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition for moisture barrier applications. The Al2O3 films were grown at 90 °C using trimethylaluminum and O2 plasma as precursors. Plasma power, exposure time and O2 concentration are found to influence the growth behavior, composition and density of ultrathin Al2O3 films.

Batch Atomic Layer Deposition of Aluminum Nitride for RF- MEMS and GAN Power-Devices

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Zhen Zhu, Erik Østreng, Iiris Tuoriniemi, Zhenzi Chen, Kalle Niiranen, Sami Sneck

Z. Zhu, E. Østreng, I. Tuoriniemi, Z. Chen, K. Niiranen and S. Sneck, “Batch Atomic Layer Deposition of Aluminum Nitride for RF-MEMS and GAN Power-Devices,” 2019 China Semiconductor Technology International Conference (CSTIC), Shanghai, China, 2019, pp. 1-3. doi: 10.1109/CSTIC.2019.8755779

We report for the first-time batch process of atomic layer deposition (ALD) for aluminum nitride (AlN). Ammonia (NH 3 ) was used as the nitrogen source, while trimethylaluminum (TMA) or aluminum chloride (AlCl 3 ) were the metal precursors for the AlN films deposited at 325-475 °C and 525 °C, respectively. The AlN films deposited in batch process had good thickness uniformity and low impurity levels, while the crystalline structure was dependent on the precursor, i.e. TMA or AlCl 3 .

Macro-conformality of coatings deposited using high-speed spatial plasma-enhanced atomic layer deposition

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Eric Dickey, Kalle Niiranen, Bryan Danforth, and William A. Barrow

E. Dickey, K. Niiranen, B. Danforth and W. Barrow. “Macro-conformality of coatings deposited using high-speed spatial plasma-enhanced atomic layer deposition”, Applied Optics 59, A16-A19, 2020; doi:10.1364/AO.59.000A16

Rotational spatial plasma-enhanced atomic layer deposition has been used to deposit thin films on half-sphere lenses. Non-uniformity of less than ±1% is demonstrated for Nb2O5 deposited at 1.4 Å/s and for SiO2 deposited at 6 Å/s.

Atomic Layer Deposition of Nickel Nitride Thin Films using NiCl2(TMPDA) and Tert‐ Butylhydrazine as Precursors

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Katja Väyrynen Timo Hatanpää Miika Mattinen Mikko J. Heikkilä Kenichiro Mizohata Jyrki Räisänen Joosep Link Raivo Stern Mikko Ritala Markku Leskelä

K. Väyrynen, T. Hatanpää, M. Mattinen, M. J. Heikkilä, K. Mizohata, J. Räisänen, J. Link, R. Stern, M. Ritala and M. Leskelä, ” Atomic Layer Deposition of Nickel Nitride Thin Films using NiCl2(TMPDA) and Tert‐Butylhydrazine as Precursors”, Phys. Status Solidi A 216: 1900058, 2019; doi:10.1002/pssa.201900058

This article describes the atomic layer deposition (ALD) of nickel nitride and nickel thin films using a diamine adduct of Ni(II) chloride, NiCl2(TMPDA) (TMPDA = N,N,N′,N′,‐tetramethyl‐1,3‐propanediamine), as the metal precursor. The films are grown at low temperatures of 190–250 °C. This is one of the few low‐temperature ALD processes that can be used to grow Ni3N and Ni metal on both insulating and conductive substrates.

Nickel Germanide Thin Films by Atomic Layer Deposition

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Katja Väyrynen, Anton Vihervaara, Timo Hatanpää, Miika Mattinen, Mikko J. Heikkilä, Kenichiro Mizohata, Jyrki Räisänen, Mikko Ritala, Markku Leskelä

K. Väyrynen, A. Vihervaara, T. Hatanpää, M. Mattinen, M. Heikkilä, K. Mizohata, J. Räisänen, M. Ritala, M. Leskelä, ” Nickel Germanide Thin Films by Atomic Layer Deposition”, Chem. Mater. 2019, 31, 14, 5314-5319 doi: 10.1021/acs.chemmater.9b01877

This work presents preparation of nickel germanide (Ni2Ge) thin films by atomic layer deposition (ALD). This is the first time ALD NixGey films are prepared directly upon the combination of two precursors and without any annealing treatment. NixGey is an important contact material for enabling Ge-based transistors and thus circumventing the scaling issues related to current microelectronics.

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