Products

Semiconductor Equipment

The Beneq Transform® is a new class of ALD cluster tool. It uniquely combines automation with both thermal batch and plasma enhanced ALD process modules. The Beneq Transform® offers unparalleled flexibility for processing sequences with multiple ALD process modules to meet wafer capacity. It is designed to be upgradable to meet growing volumes and new ALD processes.


BENEQ Transform®

The BENEQ Transform® is a one-stop, production-ready ALD solution for power electronics, MEMS and sensors, RF, LED, photonics, and encapsulation applications. It offers both thermal and plasma ALD modules and is capable of single or batch processing. Its proprietary preheating module eliminates hours of waiting time and boosts throughput to a whole new level: 15 wafers per hour @50 nm Al2O3, in thermal mode. Throughput can be further increased by adding up to 2 more process modules, thermal or plasma.

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BENEQ Transform® Lite

Maximize versatility as volume scales. The BENEQ Transform® Lite offers the same thermal, plasma and preheating module as the larger Transform®. It works well for R&D, prototyping, as well as volume production. It is capable of surface pre-treatment and can coat substrate materials at wafer sizes from 3 to 8 inches. With the BENEQ Transform® Lite customers can now run several different ALD processes on multiple devices and applications, all on a single footprint!

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Beneq Transform® 300

Beneq Transform® 300 is the only 300 mm ALD cluster tool combining thermal ALD (batch) and plasma ALD (single wafer) technologies to provide a highly versatile platform to IDMs and foundries. Transform® 300 is dedicated to a broad range of advanced thin-film applications from gate dielectric, including in high aspect ratio trenches, to anti-reflection coating, final passivation or encapsulation and beyond for high-volume manufacturing CIS, Power, Micro-OLED/LED, Advanced Packaging and other MtM devices.

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Beneq Prodigy™

Beneq Prodigy™ sets a new standard for affordable volume manufacturing of compound semiconductors (CS) and MEMS devices with ALD. It is the ideal manufacturing solution for compound semiconductor including RF IC’s (GaAs/GaN/InP), LED, VCSEL and Light Detectors and for MEMS providing best-of-breed passivation and encapsulation films across various wafer sizes and types. Enjoy a simple, yet elegant, solution for enhancing device performance on 75-200 mm wafers with a low-cost batch tool with latest ALD technology.

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Comparison

Which product is for you

Product Transform® Lite Transform® Transform® 300 Prodigy
Dimensions 3000 x 1250 x 2250 mm 3000 x 3000 x 2250 mm 4400 x 4800 x 2250 mm 3500 x 2500 mm
Max Batch Load 200 mm x 25 wafers 200 mm x 25 wafers 300 mm x 25 wafers 150 mm x 50 wafers, 100 mm x 75 wafers
VCE Loadlocks 1 2 EFEM 1
Integration Cluster, up to 2 ALD modules & 1 pre-heater Cluster, up to 3 ALD modules & 1 pre-heater Cluster with EFEM, up to 3 ALD modules & 1 pre-heater Standalone system
Ozone Process Capability Optional Optional Optional Optional
Wafer Pre-Heating Yes Yes Yes Yes
Wafer Cooling Facet-mounted Built-in Built-in No
Temperature Range 25 – 420 C 25 – 420 C 25 – 420 C 25 – 420 C
Plasma Gas Lines 2 + 2 optional 2 + 2 optional 3+1 optional 0
Transfer Module Type Mx400 Mx600 M2C5 Automatic Loader
Wafer Throughput (Al2O3 @ 200 C, 50 nm) 15 wafers/hour – 1 PM 40 wafers/hour – 3 PM 12 wafers/hour – 1 PM >14 wafers/hour
Wafer Throughput (HfO2 @ 250 C, 20 nm) 13 wafers/hour – 1 PM 28 wafers/hour – 3 PM N/A N/A
Integration SECS/GEM SECS/GEM SECS/GEM SECS/GEM
Safety and Ergonomics SEMI S2 and S8 SEMI S2 and S8 SEMI S2 and S8 SEMI S2
Product Transform® Lite
Dimensions 3000 x 1250 x 2250 mm
Max Batch Load 200 mm x 25 wafers
VCE Loadlocks 1
Integration SECS/GEM
Ozone Process Capability Optional
Wafer Pre-Heating Yes
Wafer Cooling Facet-mounted
Temperature Range 25 – 420 C
Plasma Gas Lines 2 + 2 optional
Transfer Module Type Mx400
Wafer Throughput (Al2O3 @ 200 C, 50 nm) 15 wafers/hour – 1 PM
Wafer Throughput (HfO2 @ 250 C, 20 nm) 13 wafers/hour – 1 PM
Safety and Ergonomics SEMI S2 and S8
Transform® Lite
Product Transform®
Dimensions 3000 x 3000 x 2250 mm
Max Batch Load 200 mm x 25 wafers
VCE Loadlocks 2
Integration SECS/GEM
Ozone Process Capability Optional
Wafer Pre-Heating Yes
Wafer Cooling Built-in
Temperature Range 25 – 420 C
Plasma Gas Lines 2 + 2 optional
Transfer Module Type Mx600
Wafer Throughput (Al2O3 @ 200 C, 50 nm) 40 wafers/hour – 3 PM
Wafer Throughput (HfO2 @ 250 C, 20 nm) 28 wafers/hour – 3 PM
Safety and Ergonomics SEMI S2 and S8
Transform®
Product Transform® 300
Dimensions 4400 x 4800 x 2250 mm
Max Batch Load 300 mm x 25 wafers
VCE Loadlocks EFEM
Integration SECS/GEM
Ozone Process Capability Optional
Wafer Pre-Heating Yes
Wafer Cooling Built-in
Temperature Range 25 – 420 C
Plasma Gas Lines 3+1 optional
Transfer Module Type M2C5
Wafer Throughput (Al2O3 @ 200 C, 50 nm) 12 wafers/hour – 1 PM
Wafer Throughput (HfO2 @ 250 C, 20 nm) N/A
Safety and Ergonomics SEMI S2 and S8
Transform ® 300
Product Prodigy
Dimensions 3500 x 2500 mm
Max Batch Load 150 mm x 50 wafers, 100 mm x 75 wafers
VCE Loadlocks 1
Integration SECS/GEM
Ozone Process Capability Optional
Wafer Pre-Heating Yes
Wafer Cooling No
Temperature Range 25 – 420 C
Plasma Gas Lines 0
Transfer Module Type Automatic Loader
Wafer Throughput (Al2O3 @ 200 C, 50 nm) >14 wafers/hour
Wafer Throughput (HfO2 @ 250 C, 20 nm) N/A
Safety and Ergonomics SEMI S2
Prodigy

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