The most versatile ALD cluster tool for 300 mm wafer production
Beneq Transform 300 is a highly versatile manufacturing platform intended for IDMs and foundries dedicated to CIS, Power, Micro-OLED/LED, Advanced Packaging and other MtM applications. It is a highly configurable solution that caters to multiple advanced thin-film applications ranging from gate dielectric to passivation and/or encapsulation and beyond.
Maximum flexbility and capability. The Beneq Transform® 300 is the only 300mm ALD cluster tool offering both Thermal ALD (batch) and Plasma ALD (single wafer) technologies.
Find the right set up for you. The Transform® 300 platform is designed to meet a wide range of capacity and applications requirements including advanced packaging, chip scale package and wafer-on-tape applications.
The top tier of industry standards. This tool includes best-in-class serviceability and the shortest MTTCR available. With our proprietary pre-heating module, enjoy some of the highest throughput for thermal batch ALD.
Beneq Transform® 300 is cleanroom compatible with SECS/GEM communication capabilities and is compliant with the highest SEMI S2 and S8 standards.
| Maximum Configuration | 3 processing modules & 1 preheater | Maximum Configuration 3 processing modules & 1 preheater |
| Preheating capability | Yes | Preheating capability Yes |
| Transfer module | M2C5 | Transfer module M2C5 |
| Cooling option | Built-in | Cooling option Built-in |
| Substrate loading | EFEM | Substrate loading EFEM |
| Substrate size | 300mm with 200mm bridge capability | Substrate size 300mm with 200mm bridge capability |
| Substrate | Si, Glass, and Others | Substrate Si, Glass, and Others |
| Dimensions | 4400 x 4800 x 2250 mm | Dimensions 4400 x 4800 x 2250 mm |
| Host Integration | SECS/GEM | Host Integration SECS/GEM |
| Al2O3–300°C–50nm | 12 wafers/hour – 1 PM | Al2O3–300°C–50nm 12 wafers/hour – 1 PM |
| Batch size | Up to 25 x 300 mm wafers | Batch size Up to 25 x 300 mm wafers |
| Safety standards | SEMI S2 and S8 | Safety standards SEMI S2 and S8 |
| ALD processes | Al2O3, HfO2, Ta2O5, TiO2, SiO2, ZnO, AlN, TiN | ALD processes Al2O3, HfO2, Ta2O5, TiO2, SiO2, ZnO, AlN, TiN |
| Processing temperature | Up to 420 °C | Processing temperature Up to 420 °C |
| Liquid source lines | 3+1 (optional) | Liquid source lines 3+1 (optional) |
| Ammonia gas line | Optional | Ammonia gas line Optional |
| Ozone gas line | Optional | Ozone gas line Optional |
| Process control | Recipe-based; fully configurable | Process control Recipe-based; fully configurable |
| Single wafer | 300mm with 200mm bridge capability | Single wafer 300mm with 200mm bridge capability |
| Safety standards | SEMI S2 and S8 | Safety standards SEMI S2 and S8 |
| ALD processes | AlN, Si3N4, SiO2, Al2O3 | ALD processes AlN, Si3N4, SiO2, Al2O3 |
| Processing temperature | Up to 350 °C | Processing temperature Up to 350 °C |
| Liquid source lines | 3+1 (optional) | Liquid source lines 3+1 (optional) |
| Plasma gas lines | N2, O2, H2(optional) | Plasma gas lines N2, O2, H2(optional) |
| Plasma pretreatment | Yes | Plasma pretreatment Yes |
| Ammonia gas line | Optional | Ammonia gas line Optional |
| Ozone gas line | Optional | Ozone gas line Optional |
| Process control | Recipe-based; fully configurable | Process control Recipe-based; fully configurable |
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