Use of Oxide Thin Film Transistor (O-TFT) technology in modern display manufacturing requires a highly conformal and pinhole-free gate dielectric with low hydrogen content. Customer had to find an alternative for PECVD, which was not anymore working for the new generation O-TFT technology.
An international display manufacturer
Beneq high speed ALD process was used to deposit an Al2O3 gate insulator of 100 nm and the device was showing lower leakage current, making it suitable for the next generation display.
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