Customer Cases

Gate Insulator for Oxide-TFT Display

The challenge

Use of Oxide Thin Film Transistor (O-TFT) technology in modern display manufacturing requires a highly conformal and pinhole-free gate dielectric with low hydrogen content. Customer had to find an alternative for PECVD, which was not anymore working for the new generation O-TFT technology.

The customer

An international display manufacturer

Beneq solution

Beneq high speed ALD process was used to deposit an Al2O3 gate insulator of 100 nm and the device was showing lower leakage current, making it suitable for the next generation display.

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