Industries & Applications
ALD films have many advantages that are significant for power devices, including exact thickness control, high breakdown voltage and excellent step coverage. ALD processes are easily incorporated into the manufacturing process of GaN, SiC and traditional IGBT’s. This involves deposition of high k dielectrics wherein one deposits a gate insulator to achieve low interface state and high breakdown voltage.
GaN-based power devices are emerging as promising candidates for next generation high efficiency power converters owing to superior material properties such as high electric breakdown field, high electron saturation velocity and high mobility. ALD enables damage-free surface preparation and high-k dielectric deposition on silicon and wide band-gap power devices. This is crucial for extracting best electrical performance. ALD in-situ plasma cleaning pre-deposition is an effective way to maximize device performance.