For TiN, SiO2, AI203 and SiN processes and high-speed processing
With plasma-enhanced ALD (PEALD) options for TFS 200, you get:
- enhanced processes such as TiN, SiO2, Al2O3 and SiN
- low temperature deposition
- high-speed processing
- high uniformity
- less impurities and extremely low particle level, added particles in the range of ten added particles for 200 mm wafer deposition of both conductive and insulating films
- the possibility to run thermal deposition even with plasma head in place
- capacitively coupled plasma (CCP) with showerhead and the freedom to use direct or remote mode with the same plasma head
- uniform temperature in the entire reaction chamber and plasma head area, which ensures true ALD and low particle depositions
- hot spots eliminated in the design
- high temperature version available, up to 450 °C
Please note that either a manual substrate loader with a manual load lock, or an automatic load lock with an automatic loader are needed when the TFS 200 is equipped with the plasma option.
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