EQUIPMENT
Transfer module
Automatic
VCE loadlocks
1
Substrate size
75, 100, 150, or 200 mm
Substrate
Si, GaAs, InP, SiC, GaN, Sapphire, LNO/LTO
Dimensions
3500 x 2500 mm
Integration
SECS/GEM
THROUGHPUT
Al2O3–300°C–50nm
>14 wafers/hour – 50 x 150 mm wafer batch
ALD BATCH PROCESS MODULE
Batch size
Up to 25 x 200 mm wafers, 50 x 150 mm wafers, 75 x 100 mm wafers
Safety standards
SEMI S2
ALD processes
Al2O3, TiO2, SiO2 and others
Processing temperature
< 420 °C
Liquid source lines
2
Ammonia gas line
Optional
Ozone gas line
Optional
Process control
Recipe-based; fully configurable
