Beneq Prodigy

The simple and elegant ALD solution for compound semiconductor device fabrication

EQUIPMENT

Transfer module
Automatic
VCE loadlocks
1
Substrate size
75, 100, 150, or 200 mm
Substrate
Si, GaAs, InP, SiC, GaN, Sapphire, LNO/LTO
Dimensions
3500 x 2500 mm
Integration
SECS/GEM

THROUGHPUT

Al2O3–300°C–50nm
>14 wafers/hour – 50 x 150 mm wafer batch

ALD BATCH PROCESS MODULE

Batch size
Up to 25 x 200 mm wafers, 50 x 150 mm wafers, 75 x 100 mm wafers
Safety standards
SEMI S2
ALD processes
Al2O3, TiO2, SiO2 and others
Processing temperature
< 420 °C
Liquid source lines
2
Ammonia gas line
Optional
Ozone gas line
Optional
Process control
Recipe-based; fully configurable

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