3770 x 1340 x 1280 mm
Dimensions
Production and R&D
Usage
up to 200 mm wafer
Substrate size
Cluster
Integration
Process type
Rotary spatial plasma
Enhanced ALD
Single side coating
Usage
Production
Substrate type
Up to 200 mm wafer
Substrate loading
Automatic
Manual
Main dimensions
3770 x 1340 x 1280 mm
Integration
Cluster
Process temperature range
25 – 200 °C
Batch capacity
7 pcs 200 mm wafer
Maximum rotational speed
200 rpm
Deposition rate
Up to 1.5 µm/h
Plasma gas lines
Up to 3
Precursor lines (ambient to 120 °C)
Up to 4
Plasma type
DC plasma
Control system
PLC control with PC user interface
Process control
Recipe-based; fully configurable