Plasma options PO-200 and PO-200-HT
- for up to 200 mm round wafers
- excellent uniformity
- crossflow precursor delivery
- reaction chamber material aluminum or stainless steel
- includes plasma head PH-200, plasma matching box, plasma generator, plasma carrier gas line with mass flow controller (MFC) and plasma generator rack
- up to 450 °C deposition temperatures
- plasma reaction chamber must be added separately
- plasma gas lines must be added separately
- substrate loading from side, manual loader or load-lock must be inculded
- PO-200-HT: for processes where high temperature is needed. Maximum temperature 450 °C.
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