High Aspect Ratio (HAR) reaction chamber

coating inside nanotubes, filters, ceramics and pores
no cross-contamination – the inert gas valve system (IGV) keeps precursor flow out of the reaction chamber
wide process temperature range – from O °C to 300 °C
proven performance up to AR of 1:3000
true stop flow – unlimited precursor residence time
different gas flow configuration options – cross flows, shower head flows, or both
easy maintenance of reaction chambers – easy to remove, clean, and put back