Tech specs

High Aspect Ratio (HAR) reaction chamber


HAR reaction chamber detail
  • coating inside nanotubes, filters, ceramics and pores
  • no cross-contamination – the inert gas valve system (IGV) keeps precursor flow out of the reaction chamber
  • wide process temperature range – from O °C to 300 °C
  • proven performance up to AR of 1:3000
  • true stop flow – unlimited precursor residence time
  • different gas flow configuration options – cross flows, shower head flows, or both
  • easy maintenance of reaction chambers – easy to remove, clean, and put back

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