For TiN, SiO2, AI203 and SiN processes and high-speed processing

With plasma-enhanced ALD (PEALD) options for TFS 200, you get:

• enhanced processes such as TiN, SiO₂, Al₂O₃ and SiN
• low temperature deposition
• high-speed processing
• high uniformity
• less impurities and extremely low particle level, added particles in the range of ten added particles for 200 mm wafer deposition of both conductive and insulating films
• the possibility to run thermal deposition even with plasma head in place
• capacitively coupled plasma (CCP) with showerhead and the freedom to use direct or remote mode with the same plasma head
• uniform temperature in the entire reaction chamber and plasma head area, which ensures true ALD and low particle depositions
• hot spots eliminated in the design
• high temperature version available, up to 450 °C

Please note that either a manual substrate loader with a manual load lock, or an automatic load lock with an automatic loader are needed when the TFS 200 is equipped with the plasma option.

Plasma options PO-200 and PO-200-HT

• for up to 200 mm round wafers
• excellent uniformity
• crossflow precursor delivery
• reaction chamber material aluminum or stainless steel
• includes plasma head PH-200, plasma matching box, plasma generator, plasma carrier gas line with mass flow controller (MFC) and plasma generator rack
• up to 450 °C deposition temperatures
• plasma reaction chamber must be added separately
• plasma gas lines must be added separately
• substrate loading from side, manual loader or load-lock must be inculded  
• PO-200-HT: for processes where high temperature is needed. Maximum temperature 450 °C.