Conformal ALD coatings for emerging GaN & SiC power devices
High electron mobility and incomparable breakdown field make wide band-gap semiconductors, like GaN and SiC, the go-to materials for next-generation power devices. However, they suffer from drawbacks at their interface, including high interface trap density, current leakage and poor stability under voltage. Atomic Layer Deposition enables damage-free surface preparation of emerging GaN and SiC devices and traditional IGBTs, crucial for extracting the best electrical performance.
Process Options
Thermal ALD
Plasma-Enhanced ALD
Materials
Al2O3, AlN, SiO2, Si3N4, HfO2, Ta2O5, TiO2
Substrates
GaN, SiC, Si
3, 6, 8, 12″ wafers
POWER DEVICE SOLUTIONS
At Beneq, our ALD processes deposit ultra-thin and pinhole-free films with precision thickness control, high breakdown voltage and unparalleled step coverage. Our batch manufacturing cluster tools feature both thermal and plasma ALD, offering a range of thin film solutions for power devices including:
- High-k gate dielectric deposition
- Surface passivation for reduced interface traps
- Epitaxial nucleation or seed layers
- Wafer-level thin film encapsulation
