Radio Frequency (RF) devices
ALD plasma surface passivation methods and ALD high-k dielectric gate stacks are a must for metal-oxide-semiconductor devices (MOS) on III-V materials such as GaAs or equivalent compound semiconductor devices. Interface properties and dielectric quality set device performance especially on high-speed applications. Surface passivation via an in-situ ALD plasma cleaning and pre oxide deposition provide optimal conditions for best performance.
III-V Surface Passivation
III-V semiconductors such as GaAs, InGaAs, InP, InAs, GaN and others attract interest in microelectronics and optoelectronics due to their high intrinsic electron mobility. However, the poor electronic properties of the intrinsic surface oxides deteriorate the device performance due to high surface recombination. Capability for plasma and thermal ALD is crucial for maximum device performance.