Executive Summary

As the semiconductor industry continues to diversify beyond Moore’s Law for advanced logic and memory, More-than-Moore (MtM) applications such as Power, RF ICs, RF MEMS, and 3D integration increasingly rely on advanced materials engineering at the nanoscale. Atomic Layer Deposition (ALD), with its unparalleled conformality, atomic-level thickness control, and ability to engineer interface properties, has emerged as a critical enabler for the precision nitride films these devices require.

This Solutions Brochure explores Beneq’s ALD capabilities in delivering, in addition to the more widely adopted metal oxide films (e.g. Al2O3, SiO2 and HfO2) critical nitride materials—AlN, SiN, and TiN—using the Beneq Transform® cluster tool. The Transform platform uniquely supports both thermal and plasma-enhanced ALD processes in a unified system, enabling the deposition of multiple high-performance oxide and nitride films in a single vacuum environment either in parallel or sequencially. The ability to switch between process modules without breaking vacuum ensures superior film interfaces and process integration for MtM applications.

Introduction: The Growth of More-than-Moore

While traditional advanced logic and memory performance gains continue with dimensional and architecture scaling, MtM technologies achieve functional integration and performance enhancement for power, RF, sensing, automotive, medical and IoT through system-level innovations—often involving heterogeneous integration and/or novel materials. For the past few years, the growing demand for:

· GaN power devices with critical interface requirements,

· RF ICs with stringent surface passivation needs,

· RF MEMS requiring high selectivity etch masks and piezoelectric stacks,

· and 3D integrated systems demanding conformal seed and barrier layers,

has placed new emphasis on advanced thin-film deposition solutions involving Nitride films and Nitride/Oxide Stacks which are enabled by ALD, and Beneq’s Transform ALD cluster tool is delivering them.

Beneq Transform®: A Versatile ALD Platform for Nitride Films and Stacks

The Beneq Transform® is a modular cluster tool supporting up to three ALD process modules with full automation, substrate handling, and vacuum integration. Its architecture enables:

· In-situ multi-layer stacks i.e. “3-step approach” without breaking vacuum,

· Batch processing for high throughput mini-batch thermal processes,

· Single-wafer plasma-enhanced processes for interface-sensitive applications,

· Advanced nitride chemistries across diverse process windows.

This platform flexibility enables deposition of AlN, SiN, and TiN films for various MtM use cases—all within a single toolset.

ALD Nitride Processes and Application Use Cases

1. Interfacial Layer for GaN Power Devices using Plasma-Enhanced ALD of AlN:

GaN HEMTs, MISHEMTs and other power devices are critically sensitive to interface quality between the GaN layer and the gate dielectric or passivation stack. Beneq’s PEALD AlN offers:

· Low-temperature deposition (≤300°C) to protect active device layers,

· Controlled crystallinity, stoichiometry and low hydrogen and carbon content, critical for interface stability and reliability,

· Improved device performance associated with low density of interface states (Dit), supporting enhanced threshold voltage stability and hysteresis, low leakage current, higher mobility and low dynamic on resistance.

In summary, PEALD AlN forms a critical interfacial layer improving device performance, robustness and reliability.

For GaN Power Devices, Beneq Transform PEALD AlN process features excellent thickness uniformity and repeatability and low oxygen impurity. In-situ plasma pre-clean is also enabled to remove oxygen from the surface, resulting in drastic reduction of Dit. The AlN interface process can be combined (without breaking vacuum) with deposition of a thermal oxide capping layer (e.g. Al2O3, SiO2).

2. Plasma-Enhanced ALD of SiN: Surface Passivation for RF ICs

GaAs, GaN and InP RF devices and ICs demand high frequency performance, reliability and power efficiency. PEALD SiN from Beneq provides:

· Superior conformality on patterned wafers, essential for small geometry RF structures such as for HBT and HEMT,

· Low hydrogen and carbon incorporation, minimizing carrier trapping, leakage current and RF dispersion,

· Low deposition temperature, compatible with temperature sensitive compound semiconductors.

This makes PEALD SiN an ideal passivation layer to replace legacy PECVD SiN, reducing density of surface states (Dit) and enhancing long-term stability.

For Surface Passivation of RF ICs, Beneq Transform PEALD SiN process features good thickness uniformity, excellent conformality and low hydrogen impurity (see Table for respective process specifications). In-situ plasma pre-clean is also enabled to remove oxygen and contaminants from the surface, resulting in drastic reduction of Dit.

3. Hardmask for RF and Piezo MEMS using Thermal Batch ALD of AlN

RF and Piezo MEMS devices require precision etch masks with high selectivity and conformality. Beneq’s thermal batch ALD of aluminum nitride (AlN) delivers:

· Excellent film uniformity on complex 3D structures,

· High etch selectivity for critical patterning steps,

· Batch capability for high-volume manufacturing.

With its high-density and conformal growth, thermal ALD AlN serves as an effective hardmask that withstands aggressive etching processes while maintaining feature integrity.

For RF and Piezo MEMS Hardmask, Beneq Transform thermal batch process offers excellent thickness uniformity and repeatability, low oxygen impurity, and double-digit throughput (see Table for respective process specifications). The same type of ALD film is also used in the temperature compensation layer sometimes as part of a stack with oxides.

4. Plasma-Enhanced ALD of AlN: Seed Layer for RF MEMS Devices

In addition to hardmask applications, AlN plays a key role as a seed layer for piezoelectric stacks in RF MEMS components such as BAW and FBAR resonators. Plasma-enhanced ALD of AlN enables:

· Enhanced Nucleation of the preferred c-axis orientation of the active AlScN piezoelectric film on metal electrodes (e.g. Mo (110), Pt (111), Ti (0001)),

· Low-temperature processing (~250–300 °C) reducing thermal stress and compatible with broader choice of substrates and integration schemes,

· Improved adhesion and surface energy, promoting high-quality PVD or MOCVD AlN growth,

· Highly uniform and stoichiometric interfacial layers

Using PEALD AlN as a seed layer leads to enhanced crystal orientation or texture control and reduced defect density serving as a template for the subsequent piezoelectric layer, which is essential for achieving high-Q, low acoustic and dielectric loss, and high frequency stability MEMS resonators. Moreover, templating can be further enhanced by inserting PEALD AlN into the AlScN piezo film. Integration on the Beneq Transform allows seamless deposition of both the seed and encapsulating/passivation layers without exposure to ambient conditions.

5. Thermal Batch ALD of TiN: Barrier Layer for Through-Silicon Vias (TSVs)

In 3D integration, low resistivity and conformal metal seed layers are key to enabling high aspect-ratio TSV fill. Beneq’s thermal ALD TiN offers:

· Ideal conformality in high aspect ratio TSV structures,

· Excellent adhesion to underlying isolation layer and barrier properties to Cu fill,

· Scalability through batch processing for high throughput.

ALD TiN is widely adopted as a barrier layer, enabling subsequent seed layer deposition and electroplating fill metallization.

For TSV barrier layers, Beneq Transform thermal TiN process features good thickness uniformity, excellent conformality and low resistivity (see Table below for respective process specifications). Subsequent to ALD TiN barrier, an ALD seed layer such as Ru can also be deposited on the same Beneq Transform cluster tool. Additionally, an ALD SiO2 isolation layer can be deposited on the post etch TSV prior to the ALD TiN barrier on the same tool.

Nitride film performance on Beneq Transform cluster tool

Advantages of the Beneq Transform® for Nitride Integration

· Multi-material capability: AlN, SiN, TiN in the same system

· Process versatility: Thermal and plasma-enhanced ALD modules

· Unbroken vacuum processing: Improved film interfaces and purity

· Batch and single-wafer process modules: Optimized throughput and precision

· Modular upgradability: Future-proof investment for expanding process needs

The Beneq Transform® ALD cluster tool further offers an advanced, upgradeable configuration capable of handling hydrazine (N₂H₄) as a nitrogen precursor in addition to standard NH3 or N2, enabling low-temperature processing of high-performance critical nitride films. Beneq Transform is compatible with Brute® hydrazine ampoule from RASIRC.

Summary and Outlook

The demand for advanced nitride films in More-than-Moore semiconductor applications continues to grow across Power, RF ICs, RF MEMS, and 3D integration markets. Beneq’s Transform® ALD cluster tool is purpose-built to meet this demand—offering unmatched flexibility in depositing high-quality AlN, SiN, and TiN films using both thermal and plasma-enhanced ALD within the same platform and in conjunction with ALD oxides in order to meet advanced device requirements.

As device architectures become more complex and the need for high-performance materials increases, Beneq’s scalable and versatile ALD solutions position manufacturers to stay ahead in the rapidly evolving MtM technology and HVM landscape.