Beneq Transform 300 is a highly versatile manufacturing platform intended for IDMs and foundries dedicated to CIS, Power, Micro-OLED/LED, Advanced Packaging and other MtM applications. It is a highly configurable solution that caters to multiple advanced thin-film applications ranging from gate dielectric to passivation and/or encapsulation and beyond.

Versatility

Maximum flexbility and capability. The Beneq Transform® 300 is the only 300mm ALD cluster tool offering both Thermal ALD (batch) and Plasma ALD (single wafer) technologies.

Configurable

Find the right set up for you. The Transform® 300 platform is designed to meet a wide range of capacity and applications requirements including advanced packaging, chip scale package and wafer-on-tape applications.

Productivity

The top tier of industry standards. This tool includes best-in-class serviceability and the shortest MTTCR available. With our proprietary pre-heating module, enjoy some of the highest throughput for thermal batch ALD.

FAB-Ready

Beneq Transform® 300 is cleanroom compatible with SECS/GEM communication capabilities and is compliant with the highest SEMI S2 and S8 standards.

 

Tech Specifications Transform ® 300

Equipment

Maximum Configuration
3 processing modules & 1 preheater
Preheating capability
Yes
Transfer module
M2C5
Cooling option
Built-in
Substrate loading
EFEM
Substrate size
300mm with 200mm bridge capability
Substrate
Si, Glass, and Others
Dimensions
4400 x 4800 x 2250 mm
Host Integration
SECS/GEM

THROUGHPUT

Al2O3–300°C–50nm
12 wafers/hour – 1 PM

ALD BATCH PROCESS MODULE

Batch size
Up to 25 x 300 mm wafers
Safety standards
SEMI S2 and S8
ALD processes
Al2O3, HfO2, Ta2O5, TiO2, SiO2, ZnO, AlN, TiN
Processing temperature
Up to 420 °C
Liquid source lines
3+1 (optional)
Ammonia gas line
Optional
Ozone gas line
Optional
Process control
Recipe-based; fully configurable

ALD PLASMA PROCESS MODULE

Single wafer
300mm with 200mm bridge capability
Safety standards
SEMI S2 and S8
ALD processes
AlN, Si3N4, SiO2, Al2O3
Processing temperature
Up to 350 °C
Liquid source lines
3+1 (optional)
Plasma gas lines
N2, O2, H2(optional)
Plasma pretreatment
Yes
Ammonia gas line
Optional
Ozone gas line
Optional
Process control
Recipe-based; fully configurable
Product Transform® Transform ® 300 Prodigy
Dimensions 3000 x 3000 x 2250 mm 4400 x 4800 x 2250 mm 3500 x 2500 mm
Max Batch Load 200 mm x 25 wafers 300 mm x 25 wafers 150 mm x 50 wafers, 100 mm x 75 wafers
VCE Loadlocks 2 EFEM 1
Integration Cluster, up to 3 ALD modules & 1 pre-heater SECS/GEM Standalone system
Ozone Process Capability Optional Optional Optional
Wafer Pre-Heating Yes Yes Yes
Wafer Cooling Built-in Built-in No
Temperature Range 25 – 420 ℃ 25 – 420 ℃ 25 – 420 ℃
Plasma Gas Lines 2 + 2 optional 3+1 optional 0
Transfer Module Type Mx600 M2C5 Automatic Loader
Wafer Throughput (Al2O3 @ 200 C, 50 nm) 40 wafers/hour – 3 PM 12 wafers/hour – 1 PM >14 wafers/hour
Wafer Throughput (HfO2 @ 250 C, 20 nm) 28 wafers/hour – 3 PM N/A N/A
Integration SECS/GEM SECS/GEM SECS/GEM
Safety and Ergonomics SEMI S2 and S8 SEMI S2 and S8 SEMI S2
Cleanroom collaboration stock

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