Versatile ALD Platform for Diverse Thin Film Applications

The Beneq TFS 500 is a proven and adaptable ALD reactor, suitable for both advanced research and reliable batch processing. As the original model in the Beneq reactor series, it has demonstrated versatility in multi-project environments, making it a robust tool for various thin film coating applications. 

Capable of processing a wide range of substrates—including wafers, planar objects, and 3D structures—the TFS 500 can be customized with options such as a manually operated load lock, cassette loader, or glove box, enabling sample handling under inert atmosphere. Its flexible design supports interchangeable reaction chambers, allowing users to optimize the system for different application needs. 

Expanded Capabilities for Demanding Research and Production 

Building on the versatility of the TFS series, the TFS 500 is designed to accommodate larger substrates and batch sizes, making it ideal for scaling research projects and transitioning to ALD pilot production. It consistently delivers high-quality films in true atomic layer deposition mode, meeting the requirements of complex R&D initiatives. 

Advanced Plasma-Enhanced ALD (PEALD)

Standard with the Beneq TFS 500, direct and remote PEALD are powered by a capacitively-coupled plasma (CCP) source, the industry standard for ALD. This enables seamless process transfer from R&D to production. The TFS 500 supports PEALD for substrates up to 300 mm, ensuring flexibility for various project demands. 

With its scalability, precision, and flexibility, the Beneq TFS 500 is an essential tool for advanced ALD research and development. 

Tech Specifications TFS 500

Product TFS 200 TFS 500
Dimensions (L x W x H) 1325 mm x 600 mm x 1298 mm 1800 mm x 900 mm x 2033 mm
Chamber volume 200 x 95 mm (diameter x height) 200 x 170 mm (diameter x height)
Usage Research, Production Research, Production
Integration Load lock, cassette loader, cluster or glove box Load lock, cassette loader, cluster or glove box
Temperature Range 25-500 °C 25 – 500 °C
Very Low Vapor Pressure Precursors Yes Yes
ALD modes Thermal ALD, Reduced flow HAR, Fluid bed, Remote plasma ALD, Direct plasma ALD Thermal ALD, Remote plasma ALD, Direct plasma ALD
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