Beneq is excited to participate in ICSCRM 2024, the premier international forum for technical discussions on Silicon Carbide (SiC) and related materials. With over 700 attendees, including physicists, engineers, scientists, and students, ICSCRM is a must-attend event for anyone working with SiC technology.
We invite you to visit us at Booth #74, where we will be showcasing our latest innovations in Atomic Layer Deposition (ALD) for SiC device development. Our experts will be available to discuss how Beneq’s ALD solutions can help enhance performance in SiC MOSFETs and other advanced power devices.
Don’t miss these key presentations featuring Beneq:
- September 30th, 3:00 PM – ALD-deposited SiO2 dielectric stack with engineered interface using in-situ Atomic Layer Annealing for high-performance SiC MOSFETs
- October 1st, 11:30 AM – Bosch’s presentation by Johannes Ziegler: Investigation of Poly-Si gated, Al2O3-based high-k dielectrics on 4H-SiC
We look forward to meeting you and discussing how our ALD expertise can support your work.
For more conference details and registration information, click here