Beneq brings its signature ALD TechDay to Yokohama this year, alongside ICSCRM 2026 — an evening for the SiC and GaN wide-bandgap semiconductor community on how ALD is shaping next-generation power devices.
Speakers from leading power electronics manufacturing, research, and insights organizations — Yole Group, NIMS Japan (National Institute for Materials Science), Renesas Electronics Corp, and Beneq.
Industry presentations will be followed by dinner and networking — an evening to connect with peers over good food and conversation.
Places are limited — request to attend.
Date & Location:
Tuesday, 29 September 2026
18:00–21:00 (JST)
The Kahala Hotel & Resort, Yokohama, Japan
Program
Welcome & reception — the evening opens with fresh food, beverages, and warm conversations
Industry presentations — settle in for industry perspectives
Dinner and networking — socializing over good food and conversation, as the evening unfolds
Keynotes
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"SiC and GaN power electronics: from market momentum to the rising role of ALD" — Yole Group.
+Yole Group’s talk will explore the latest market trends, growth outlook, and technology roadmap for SiC and GaN power semiconductors, offering perspectives on the industry’s trajectory. By 2031, wide bandgap (WBG) device technologies are expected to represent nearly 30% of the global power electronics market, with the power SiC and GaN device markets projected to reach $11B and $3.5B, respectively. It will dive into the key application drivers fueling this growth, from electric vehicles and renewable energy to one of the most exciting frontiers in power electronics today: the explosive rise of AI data centers, whose insatiable power demands are reshaping the entire semiconductor landscape. We’ll also examine the growing role of Atomic Layer Deposition (ALD) in enabling the next generation of wide bandgap devices, with the ALD market for SiC and GaN industries alone projected to grow at a 2025–2031 CAGR of 23%, surpassing $350M by the end of the forecast period.
About the Speaker
Ezgi Dogmus, PhD — Director, Semiconductor Manufacturing & Materials, Yole Group. She leads an international team of analysts across compound semiconductors, semiconductor equipment, and packaging, as well as supporting Yole Group’s market intelligence products and consulting projects. Previously, she worked as a process development engineer on GaN-based RF and power solutions at IEMN in France. She holds a PhD in microelectronics from the University of Lille and a master’s degree from the University of Augsburg and Grenoble Institute of Technology.
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"Challenges in SiC MOS Interface Control and the Promise of ALD" — NIMS, Japan.
+Nitrogen incorporation at the SiO₂/SiC interface is widely used to improve the performance of SiC MOSFETs. While interfacial nitrogen atoms effectively reduce interface defects and enhance channel mobility, they can also introduce reliability concerns. This presentation discusses both the beneficial and adverse effects of nitrogen incorporation based on the distribution of nitrogen atoms near the SiO₂/SiC interface. Recent techniques for nitrogen profile engineering, including CO₂ annealing after NO treatment and low-temperature NO oxynitridation, will be presented. The relationship between nitrogen distribution, device performance, and reliability will be highlighted.
About the Speaker
Takuji Hosoi, Ph.D. Eng. — Group Leader, Semiconductor Device Group, Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Japan. His research focuses on post-Si semiconductor devices, including SiO₂/SiC interface engineering. He has contributed to the development of MOS gate stack technologies for SiC MOSFETs through novel oxidation and annealing processes.
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"GaN Power Devices and key technology challenges" — Renesas Electronics Corp.
+As part of Renesas’ strategic commitment to advancing GaN power technologies through the acquisition of Transphorm and collaboration with EPC, the company is accelerating the development of next-generation GaN solutions for high-performance power conversion applications. This talk presents an overview of the latest GaN power device technologies and discusses the key challenges associated with both depletion-mode (D-mode) and enhancement-mode (E-mode) architectures. Topics include device features, reliability, and technology challenges related to achieving high-performance and robust operation. The discussion will also highlight the importance of interface engineering and advanced dielectric technologies in enabling reliable GaN power devices.
About the Speaker
Takashi Ishigaki, Ph.D. Eng — Senior Principal Engineer, Operations Engineering Division, Renesas Electronics Corp., where he has led the development and commercialization of SiC and GaN power devices since joining the company in 2022. Prior to Renesas, he spent many years at Hitachi’s Central Research Laboratory, making significant contributions to SiC power semiconductor technology through pioneering research, numerous publications and patents, and presentations at leading international conferences. He also successfully led the development and commercialization of SiC power modules for railway applications while working with Hitachi’s power device business division. -
"Beneq's perspective on ALD for next-generation power devices" — Beneq
+About the Speaker
Lucas Monteiro — Head of Technology & Engineering, Beneq.