Beneq ALD for Power Devices
Atomic Layer Deposition (ALD) provides damage-free surface preparation, and is capable of depositing a variety of high-k dielectric layers with excellent step coverage and quality.
Are you looking to improve yield, performance or reliability of your Power Devices ? Beneq Atomic Layer Deposition (ALD) provides damage-free surface preparation and deposition of a variety of high-k dielectric layers with excellent step coverage and quality. Gate dielectric stacks deposited by ALD using Beneq Transform™ enable next generation Si, GaN and SiC Power Devices.
