Wafer Fab Equipment
Beneq Transform™
Versatile, automated ALD solution for high-throughput production.
Equipment
Transform™
Transform™ Lite
Maximum configuratoin
3 ALD modules & 1 pre-heater
2 ALD modules & 1 pre-heater
Preheating capability
Yes
Yes
Transfer module
Brooks Mx600SS
Brooks Mx400
Cooling option
Built-in
Facet-mounted
VCE loadlocks
2
1
Substrate Size
3", 4", 6" or 8"
3", 4", 6" or 8"
Substrate
Si, GaN-on-Si, GaAs, InP, SiC, GaN, LNO, Sapphire
Si, GaN-on-Si, GaAs, InP, SiC, GaN, LNO, Sapphire
Maximum configuration dimensions
3000 x 3000 x 2250 mm
3000 x 1250 x 2250 mm
Integration
SECS/ GEM
SECS/ GEM
Transform™
Maximum configuratoin
3 ALD modules & 1 pre-heater
Preheating capability
Yes
Transfer module
Brooks Mx600SS
Cooling option
Built-in
VCE loadlocks
2
Substrate Size
3", 4", 6" or 8"
Substrate
Si, GaN-on-Si, GaAs, InP, SiC, GaN, LNO, Sapphire
Maximum configuration dimensions
3000 x 3000 x 2250 mm
Integration
SECS/ GEM
Transform™ Lite
Maximum configuratoin
2 ALD modules & 1 pre-heater
Preheating capability
Yes
Transfer module
Brooks Mx400
Cooling option
Facet-mounted
VCE loadlocks
1
Substrate Size
3", 4", 6" or 8"
Substrate
Si, GaN-on-Si, GaAs, InP, SiC, GaN, LNO, Sapphire
Maximum configuration dimensions
3000 x 1250 x 2250 mm
Integration
SECS/ GEM
ALD Batch Process Module
Batch size
1, 10 or 25 wafers, up to 8"
Safety standards
SEMI S2 and S8
ALD processes
Al2O3, HfO2, Ta2O5, TiO2, SiO2, AlN, TiN (Others and metals to be released)
Processing temperature
Up to 420 °C
Liquid source lines
4
Ammonia (NH3) gas line
Yes
Ozone gas line
Optional
Process control
Recipe-based; fully configurable
ALD Plasma Process Module
Single wafer
Up to 8"
Safety standards
SEMI S2 and S8
ALD processes
AlN, Si3N4, SiO2, Al2O3 (Others and metals to be released)
Processing temperature
Up to 420 °C
Liquid source lines
4
Plasma gas lines
N2, H2, O2, NH3
Plasma pretreatment
Yes
Ammonia (NH3) gas line
Yes
Ozone gas line
Optional
Process control
Recipe-based; fully configurable
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