Wafer Fab Equipment

Beneq Transform™

Versatile, automated ALD solution for high-throughput production.

Equipment

Transform™ Transform™ Lite
Maximum configuration 3 ALD modules & 1 pre-heater 2 ALD modules & 1 pre-heater
Preheating capability Yes Yes
Transfer module Brooks Mx600SS Brooks Mx400
Cooling option Built-in Facet-mounted
VCE loadlocks 2 1
Substrate Size 3", 4", 6" or 8" 3", 4", 6" or 8"
Substrate Si, GaN-on-Si, GaAs, InP, SiC, GaN, LNO, Sapphire Si, GaN-on-Si, GaAs, InP, SiC, GaN, LNO, Sapphire
Maximum configuration dimensions 3000 x 3000 x 2250 mm 3000 x 1250 x 2250 mm
Integration SECS/ GEM SECS/ GEM
Transform™
Maximum configuration 3 ALD modules & 1 pre-heater
Preheating capability Yes
Transfer module Brooks Mx600SS
Cooling option Built-in
VCE loadlocks 2
Substrate Size 3", 4", 6" or 8"
Substrate Si, GaN-on-Si, GaAs, InP, SiC, GaN, LNO, Sapphire
Maximum configuration dimensions 3000 x 3000 x 2250 mm
Integration SECS/ GEM
Transform™ Lite
Maximum configuration 2 ALD modules & 1 pre-heater
Preheating capability Yes
Transfer module Brooks Mx400
Cooling option Facet-mounted
VCE loadlocks 1
Substrate Size 3", 4", 6" or 8"
Substrate Si, GaN-on-Si, GaAs, InP, SiC, GaN, LNO, Sapphire
Maximum configuration dimensions 3000 x 1250 x 2250 mm
Integration SECS/ GEM

Throughput

Transform™ Transform™ Lite
Al2O3–200°C–50nm 40 wafers/ hour 15 wafers/ hour
HfO2–250°C–20nm 28 wafers/ hour 13 wafers/ hour
Transform™
Al2O3–200°C–50nm 40 wafers/ hour
HfO2–250°C–20nm 28 wafers/ hour
Transform™ Lite
Al2O3–200°C–50nm 15 wafers/ hour
HfO2–250°C–20nm 13 wafers/ hour

ALD Batch Process Module

Batch size
1, 10 or 25 wafers, up to 8"
Safety standards
SEMI S2 and S8
ALD processes
Al2O3, HfO2, Ta2O5, TiO2, SiO2, AlN, TiN (Others and metals to be released)
Processing temperature
Up to 420 °C
Liquid source lines
4
Ammonia (NH3) gas line
Yes
Ozone gas line
Optional
Process control
Recipe-based; fully configurable

ALD Plasma Process Module

Single wafer
Up to 8"
Safety standards
SEMI S2 and S8
ALD processes
AlN, Si3N4, SiO2, Al2O3 (Others and metals to be released)
Processing temperature
Up to 420 °C
Liquid source lines
4
Plasma gas lines
N2, H2, O2, NH3
Plasma pretreatment
Yes
Ammonia (NH3) gas line
Yes
Ozone gas line
Optional
Process control
Recipe-based; fully configurable

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