Wafer fab equipment

Beneq C2R

Ultra-fast high precision spatial ALD coating

1720 x 1340 x 1280 mm

Dimensions

Production

Usage

up to 200 mm wafer

Substrate type

Cluster

Integration

Process type
Rotary spatial plasma
Enhanced ALD
Single side coating
Usage
Production
Substrate type
Up to 200 mm wafer
Substrate loading
Automatic
Manual
Main dimensions
1720 x 1340 x 1280 mm
Integration
Cluster
Process temperature range
25 – 500 °C
Batch capacity
7 pcs 200 mm wafer
Maximum rotational speed
200 rpm
Depostition rate
Typically 1-3 µm/h
Plasma gas lines
Up to 3
Precursor lines (ambient to 100 °C)
Up to 3
Plasma type
DC plasma
Control system
PLC control with PC user interface
Precursor lines (ambient to 100 °C)
Up to 4
Process control
Recipe-based; fully configurable

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