Efficient surface passivation of black silicon using spatial atomic layer depostion

Ismo T.S. Heikkinen, Päivikki Repo, Ville Vähänissi, Toni Pasanen, Ville Malinen, Hele Savin

In this work we show that surfaces of nanostructured silicon (black silicon, b-Si) can be passivated with Al2O3 using industrially viable line speeds in a prototype Spatial ALD reactor Beneq SCS 1000. Charge carrier lifetimes up to 1.25 ms were obtained, which were slightly higher than with temporal ALD
passivation on similar wafers (0.94 ms).

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